Effect of Dicing Mode on the Characteristics of Silicon Carbide Devices

Wafer dicing is a crucial first step in semiconductor manufacturing that directly affects the package quality and performance of the devices and modules, therefore, it has a wide range of application prospects in the semiconductor industry. With the increasing demand for high-performance semiconductor devices, the innovation and improvement of dicing technology are particularly important. In this paper, the 1200V 4H-SiC MOSFET was diced using mechanical dicing and laser stealth dicing, respectively. The effects of mechanical dicing and laser stealth dicing on the devices, including dicing loss, cross-sectional morphology, were compared and analyzed. The dicing loss and residual stress of laser stealth dicing is much lower than that of mechanical dicing, and the cross section of the 1200V 4H-SiC MOSFET diced by laser stealth dicing is smoother than those diced by mechanical dicing. In addition, based on crystallography, the morphologies of different sections of the devices were studied.