Surge Current Behavior Analysis of Planar-Gate SiC MOSFET Under Positive Gate Bias Using TCAD Simulations

In practical applications, SiC MOSFETs are often exposed to the surge current. However, the surge current behavior of the device under positive gate bias remains inadequately understood. Therefore, a planar-gate SiC MOSFET device structure was constructed by TCAD, and a surge current was applied to the device in the on-state and the electro-thermal simulations were performed. The device's surge behavior was divided into five stages, and each stage was individually analyzed by incorporating carrier density, mobility and temperature.