Multiple P-Type SiC Micro-Island with Multi-Step as Termination for 4H-SiC Schottky Barrier Diode
This article proposes a termination design for 4H-SiC Schottky Barrier Diodes (SBDs) that integrates uniformly distributed multiple P-type micro-island with multi-step. This design eliminates the need for high-energy ion implantation, reducing process costs. By optimizing the length <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{L}_{\mathrm{P}})$</tex>, spacing <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{S}_{\mathrm{P}})$</tex>, and number <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{N}_{\mathrm{P}})$</tex> of the micro-island, along with the step lengths <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{L}_{\text{step}})$</tex> and numbers <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{n}_{\text{step}})$</tex> in the end relaxation region, the device reverse performance can be effectively improved. The study demonstrates that with an <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{L}_{\mathrm{P}} =12$</tex> μm, <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{S}_{\mathrm{P}} =3$</tex> μm, <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{N}_{P}=5, \mathrm{L}_{\text{step}}=8\mu \mathrm{m}$</tex>, and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{n}_{\text{step}}=3$</tex> the electric field distribution is more uniform under a reverse voltage of 1200 V, achieving a terminal efficiency exceeding 90%. Furthermore, this configuration reduces the terminal area by over 16% compared to a structure comprising solely uniformly distributed P -type micro-islands.
Authors
- Kuan Yew Cheong (ORCID: https://orcid.org/0000-0001-8049-0297)
- Xiangang Xu
- Yingxin Cui (ORCID: https://orcid.org/0000-0002-5223-1578)
- Mingsheng Xu (ORCID: https://orcid.org/0000-0001-6595-2297)
- Xiaobo Sharon Hu (ORCID: https://orcid.org/0000-0002-6636-9738)
- Yu Zhong (ORCID: https://orcid.org/0000-0003-1016-6023)
- Xinyu Wang (ORCID: https://orcid.org/0009-0002-7520-1619)
- Jisheng Han
Institutions
- Universiti Sains Malaysia (MY)
- Shandong University (CN)
- State Key Laboratory of Crystal Materials
Publication Details
- Published
- 2024-11-18
- DOI
- https://doi.org/10.1109/sslchinaifws64644.2024.10835375
- Citations
- 1
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.21