AlGaN-Based Deep Ultraviolet Laser Diodes with Graded AlInGaN Last Quantum Barrier
In this paper, we proposed two kinds of graded AlInGaN last quantum barrier (LQB) structures to improve the optical performance of deep ultraviolet laser diodes (DUV LDs). Through the analysis of the P-I curves, carrier concentrations and stimulated radiation recombination rates, we have got the results that the graded AlInGaN LQB structures have higher output power and lower threshold current compared to conventional structure. Besides, the carriers concentration and stimulated radiation recombination rates in the last quantum well are higher than those in the conventional structure, which indicateqa that graded AlInGaN LQB structure significantly improved the performance of DUV LDs.
Authors
- Fang Wang (ORCID: https://orcid.org/0000-0001-7166-2069)
- Xien Sang (ORCID: https://orcid.org/0000-0002-1310-1543)
- Yuhuai Liu (ORCID: https://orcid.org/0000-0003-3097-5952)
- Juin J. Liou
Institutions
- North Minzu University (CN)
- Zhengzhou University (CN)
Publication Details
- Published
- 2024-11-18
- DOI
- https://doi.org/10.1109/sslchinaifws64644.2024.10835360
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China
- Sistema Nacional de Investigación, Secretaría Nacional de Ciencia, Tecnología e Innovación