Investigation of 1.2kV Trench SiC MOSFETs Reverse Recovery Performance at High Temperature

With the body diode of Silicon Carbide Metal Oxide Field Effect Transistor (SiC MOSFET) as the freewheeling diode (FWD) in the circuit that is widely used, its reverse recovery performance becomes significant. This paper investigates the reverse recovery characteristics of two typical 1.2kV trench SiC MOSFETs. Their temperature-dependent reverse recovery behavior from room temperature (RT) to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$175^{\circ}\mathrm{C}$</tex> is analyzed. In combination with technology computer aided design (TCAD) simulations, degradation mechanism of reverse recovery at elevated temperatures is suggested. This article provides valuable insights into the reverse recovery behavior of SiC MOSFETs, serving as a crucial guideline for the circuit applications and structure design of SiC MOSFET.