Analysis of the nFOM Value for GaN Power HEMT Device for Multi-Level Topology Applications

The application of multi-level topology can significantly reduce the loss of Si devices<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">[1], [2]</sup>. Though high-voltage GaN devices have better high-frequency performance than Si ones, the advantages of multi-level application based on GaN power HEMT are not obvious<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">[3]</sup>, which is related to the difference in the nFOM value between GaN and Si devices. Currently, few research on the nFOM value of GaN devices have been reported. This paper analyzes the nFOM value of GaN power devices with different on-resistance and blocking voltage, and the possibility of multi-level topology application of GaN power HEMT devices is discussed, which is of great significance for further loss reduction and higher system efficiency.