A Monolithically Integrated Voltage Reference based on AlGaN/GaN Schottky Gate HEMTs

In this work, a monolithically integrated voltage reference based on AlGaN/GaN Schottky Gate High Electron Mobility Transistor (SG-HEMTs) technology is proposed and studied by TCAD simulations. This simple but stable voltage reference consists of only two D-mode transistors with different threshold voltages, which can generate a predictable reference voltage (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">REF</inf>) and maintain high stability over a wide range of supply voltage and temperature. It is verified by TCAD simulations that V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">REF</inf> of 1.48V is realized for the power supply voltage range of 3.3 to 10 V. In the temperature range of 300 K to 500 K, the sensitivity of the VREF line is 0.064%/V and the temperature coefficient is 8.21 ppm/°C. The proposed design of the reference voltage source composed of double D-mode SG-HEMT exhibits high feasibility, and can be used in bias and detection circuits to reduce the circuit complexity and chip area.