Modeling of Dynamic R_ONin Hybrid Drain-Embedded Gate Injection Transistor

GaN high-electron-mobility transistors (HEMTs) have been confronted with trapping-induced dynamic ON-resistance (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{ON}}$</tex>) degradation. The p-GaN drain (PD) structure, enabling hole injection and trap compensation, can effectively suppress dynamic <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{ON}}$</tex> degradation. Accurate modeling of dynamic <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{ON}}$</tex> of GaN HEMTs is important for the design of power electronics systems. In this work, the modeling of dynamic <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{ON}}$</tex> is implemented with the impact of PD on trap compensation taken into consideration. The trapping effect and trap compensation are modeled by different RC units, which can modify the ON-state voltage (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{\text{DS,ON}}$</tex>) so as to reflect the variation of dynamic RON. Compared with traditional models, the implementation of the impact of PD in the model of dynamic <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{ON}}$</tex> yields improved accuracy. The proposed model is validated by multi-pulse dynamic <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{ON}}$</tex> tests and can be compatibly implemented in SPICE simulations for power electronic circuit design.