The Optimization of Strip GaN Monolithic-Integrated Chip

The article investigates long strip-shaped GaN monolithic chips integrated with light-emitting diodes and photodetectors, whose performance influencing factors have not yet been explored. Experiments reveal that the aspect ratio of chips and light-emitting diodes affects device performance. Compared with devices with a small aspect ratio of light-emitting diodes, chips with a large aspect ratio of light-emitting diodes exhibited improved photocurrent response which can be increased by 16.35 % to 37.13 % in experiments. Besides, the device with a smaller aspect ratio of chip shows higher performance. This informs strategies to enhance the performance of integrated long strip chips.