Low Subthreshold Swing Enables High Synaptic Weight Gains based on Channel-Side Gate Dependent Electrolyte Transistors FET Design

With the development of IoT and AI technologies, brain-like synaptic devices with precise weight modulation of synaptic plasticity and controllable preparation are of great significance for developing neuromorphic computing and intelligent sensing technologies. In this paper, we design a series of side-gate electrolyte transistors with varying gate-channel distances and systematically examine the structural design effect on synaptic weight modulation. A synaptic transistor device with an ultra-low subthreshold swing of 89.8 mV/dec has been successfully achieved by optimizing the gate-channel design. Additionally, Further characterizations of the short-term synaptic plasticity and long-term synaptic plasticity of synaptic transistors uncover the flexible modulation of the gate-channel distance-dependent synaptic weight gain behaviors, which span from as low as 6.1 to as high as 87.5 under 50 successive stimuli. The results of this work provide a reliable solution for the design and preparation of high-performance synaptic devices and lay the foundation for high-precision neural networks and intelligent sensing technologies.