Simulation Study of p-GaN/AlGaN/GaN HEMTs with Composite NiO Gate
This work introduces a novel gate-structured GaN HEMT with a composite layer of NiO and p-GaN. The effect of the composite layer and various NiO layer length ratios are investigated by Silvaco TCAD and the transfer characteristics and output characteristics of p-GaN HEMTs are simulated. The composite NiO gate structure improves device performance by reducing the on-resistance from 12.2 Ω·mm to 11.5 Ω·mm without lowering the threshold voltage. It also increases saturation current from 195 mA/mm to 265 mA/mm, which can save chip area.
Authors
- Zhiqiang Xue (ORCID: https://orcid.org/0009-0005-9125-8414)
- Bin Hou (ORCID: https://orcid.org/0000-0002-7857-5395)
- Xiaohua Ma (ORCID: https://orcid.org/0000-0002-1667-6342)
- Ling Yang (ORCID: https://orcid.org/0000-0003-4067-9778)
- Yutong Jiang (ORCID: https://orcid.org/0000-0001-6657-7126)
- Qian Xiao (ORCID: https://orcid.org/0000-0002-5657-2863)
- Mao Jia
Institutions
- Xidian University (CN)
Publication Details
- Published
- 2024-11-18
- DOI
- https://doi.org/10.1109/sslchinaifws64644.2024.10835398
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- China Postdoctoral Science Foundation
- Fundamental Research Funds for the Central Universities