Simulation Study on the Etching Depth of AlGaN/GaN Half-FinFETs

This paper investigates the effect of etching depth on Half-FinFETs through TCAD simulation software. Previously, we have proposed a novel Half-FinFET, which has a composite gate structure combining a planar gate and a fin-type gate by changing the etching depth of the fin structure and retaining the bottom channel. This structure can simultaneously improve the current density and linearity characteristics of the device. The results indicate that reducing the etching depth can improve current density and linearity characteristics, as well as a more negative threshold voltage (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{\text{TH}}$</tex>).