Unidirectional-Emitted and Polarization GaN-Base Micro-LED with Metagratings for AR Display
Micro-LED is a next-generation display technology that has garnered significant attention for its exceptional brightness, contrast, power efficiency, and longevity. It utilizes micron-sized (typically <100 µm) LED chips as pixel units, with each pixel capable of emitting light independently. It shows promising applications, especially in high-end markets and AR/*VR fields. We propose and investigate a Micro-LED device with in-situ integrated metasurface metal gratings. Based on effective medium theory and generalized Snell's law, the device not only achieves polarization control but also enables dynamic modulation of the optical field's phase. We analyze the relationships under different material choices, metasurface unit sizes, and light source conditions, and propose a fabrication process. This research provides guiding analysis and recommendations for the use of in-situ integrated metasurface metal-grating Micro-LED devices in AR, MR, and other display applications.
Authors
- Yun Lin (ORCID: https://orcid.org/0000-0001-6674-780X)
- Cheng-Ping Lin (ORCID: https://orcid.org/0000-0002-2100-6239)
- Hua Yang (ORCID: https://orcid.org/0000-0002-9638-2730)
- Chaowei Cheng (ORCID: https://orcid.org/0009-0000-3178-2189)
- Jinmin Li
- Liancheng Wang
- Xiaoyan Yi
Institutions
- Central South University (CN)
- Chinese Academy of Sciences (CN)
- Institute of Semiconductors (CN)
Publication Details
- Published
- 2024-11-18
- DOI
- https://doi.org/10.1109/sslchinaifws64644.2024.10835361
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.31
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China
- National Science Fund for Distinguished Young Scholars