A High-Efficiency 485–525 GHz On-Chip Power Combining Tripler Using Three-Port Matching Technology

In this letter, a high-efficiency 485–525 GHz frequency balanced tripler using three-port matching technology (TPMT) is reported. In comparison to traditional balanced tripler, the TPMT uses an on-chip capacitor connected to a biased microstrip line (Ms) at the bias port, which not only provides dc and RF isolation but also functions as part of the diode matching. The impedance of bias port participates in the matching process of the diode, effectively reducing the parasitic effect associated with the on-chip capacitance and thereby enhancing the efficiency of the tripler. In addition, this study adopts the on-chip power combining technology to improve the power handling capability of the frequency tripler and minimize the effects of assembly errors. At room temperature, the measured results show that the tripler has an efficiency of 4.2%–13.42% over the 485–525 GHz band at 70–172-mW input power.

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Publication Details

Journal
IEEE Microwave and Wireless Technology Letters
Published
2025-01-16
DOI
https://doi.org/10.1109/lmwt.2024.3525340
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
0.00

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article

A High-Efficiency 485–525 GHz On-Chip Power Combining Tripler Using Three-Port Matching Technology

Haomiao Wei, Jin Meng, Dehai Zhang, Li Wang
1 links
IEEE Microwave and Wireless Technology Letters
Radio Frequency Integrated Circuit Design
article

A High-Efficiency 485–525 GHz On-Chip Power Combining Tripler Using Three-Port Matching Technology

Haomiao Wei, Jin Meng, Dehai Zhang, Li Wang
article en

Abstract

In this letter, a high-efficiency 485–525 GHz frequency balanced tripler using three-port matching technology (TPMT) is reported. In comparison to traditional balanced tripler, the TPMT uses an on-chip capacitor connected to a biased microstrip line (Ms) at the bias port, which not only provides dc and RF isolation but also functions as part of the diode matching. The impedance of bias port participates in the matching process of the diode, effectively reducing the parasitic effect associated with the on-chip capacitance and thereby enhancing the efficiency of the tripler. In addition, this study adopts the on-chip power combining technology to improve the power handling capability of the frequency tripler and minimize the effects of assembly errors. At room temperature, the measured results show that the tripler has an efficiency of 4.2%–13.42% over the 485–525 GHz band at 70–172-mW input power.

IEEE Microwave and Wireless Technology LettersVol. 35(3)
University of Electronic Science and Technology of China (CN), Chinese Academy of Sciences (CN), National Space Science Center (CN)
Youth Innovation Promotion Association of the Chinese Academy of Sciences
Affordable and clean energy
Openalex Percentile: Top 99%
Radio Frequency Integrated Circuit Design
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