Selective area molecular beam epitaxy of InSb on InP(111) <sub>B</sub> : from thin films to quantum nanostructures

InSb is a material of choice for infrared as well as spintronic devices but its integration on large lattice mismatched semi-insulating III-V substrates has so far altered its exceptional properties. Here, we investigate the direct growth of InSb on InP(111)<sub>B</sub>substrates with molecular beam epitaxy. Despite the lack of a thick metamorphic buffer layer for accommodation, we show that quasi-continuous thin films can be grown using a very high Sb/In flux ratio. The quality of the films is further studied with Hall measurements on large-scale devices to assess the impact of the InSb surface and InSb/InP interface on the electronic properties. Taking advantage of the optimized growth conditions for the formation of thin films, the selective area molecular beam epitaxial growth of nanostructures is subsequently investigated. Based on cross-sectional transmission electron microscopy and scanning near-field optical microscopy in the middle-wave infrared, ultra-thin and very long in-plane InSb nanowires as well as more complex nanostructures such as nano-rings and crosses are achieved with a good structural quality.

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Publication Details

Journal
Nanotechnology
Published
2025-01-16
DOI
https://doi.org/10.1088/1361-6528/adaafb
Citations
1
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
1.25

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Selective area molecular beam epitaxy of InSb on InP(111) B : from thin films to quantum nanostructures

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Selective area molecular beam epitaxy of InSb on InP(111) B : from thin films to quantum nanostructures

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article en
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Abstract

InSb is a material of choice for infrared as well as spintronic devices but its integration on large lattice mismatched semi-insulating III-V substrates has so far altered its exceptional properties. Here, we investigate the direct growth of InSb on InP(111)<sub>B</sub>substrates with molecular beam epitaxy. Despite the lack of a thick metamorphic buffer layer for accommodation, we show that quasi-continuous thin films can be grown using a very high Sb/In flux ratio. The quality of the films is further studied with Hall measurements on large-scale devices to assess the impact of the InSb surface and InSb/InP interface on the electronic properties. Taking advantage of the optimized growth conditions for the formation of thin films, the selective area molecular beam epitaxial growth of nanostructures is subsequently investigated. Based on cross-sectional transmission electron microscopy and scanning near-field optical microscopy in the middle-wave infrared, ultra-thin and very long in-plane InSb nanowires as well as more complex nanostructures such as nano-rings and crosses are achieved with a good structural quality.

NanotechnologyVol. 36(12)
Centre National de la Recherche Scientifique (FR), Université de Lille (FR), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), CEA Grenoble (FR), Direction de la Recherche Technologique (FR), Institut d'Electronique, de Microélectronique et de Nanotechnologie (FR), Institut Nanosciences et Cryogénie (FR), Attocube Systems (Germany) (DE), Laboratoire d'Électronique des Technologies de l'Information (FR), École Centrale de Lille (FR), Université Grenoble Alpes (FR), UCLouvain (BE)
Equipex, Agence Nationale de la Recherche
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Semiconductor Quantum Structures and Devices
1.25
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