High-power (500 mW) narrow-linewidth (21 kHz) low-RIN (−168 dB/Hz) distributed feedback laser

A high-power, narrow-linewidth, low-relative-intensity-noise (RIN) distributed feedback (DFB) laser is demonstrated. The laser employs four strained AlGaInAs quantum wells and three diluted waveguides to reduce internal loss, and enhance heat dissipation performance to reach a high power and low noise operation. At a test temperature of 15 °C, the DFB laser with a cavity length of 1.5 mm exhibited single mode output power of 517 mW in pulsed mode and 424 mW in continuous-wave (CW) mode. with far-field full width at half maximum (FWHM) divergence angles of 10°×20°. In addition, the DFB laser achieved an intrinsic linewidth of 21 kHz, and an ultra-low RIN of less than -168 dB/Hz.

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Publication Details

Journal
Optics Express
Published
2025-01-16
DOI
https://doi.org/10.1364/oe.550648
Citations
9
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
6.57

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article

High-power (500 mW) narrow-linewidth (21 kHz) low-RIN (−168 dB/Hz) distributed feedback laser

Hao Song, Lingjuan Zhao, Zi Wang, Hao Wang et al.
9 citations
Optics Express
Semiconductor Lasers and Optical Devices
6.57
article

High-power (500 mW) narrow-linewidth (21 kHz) low-RIN (−168 dB/Hz) distributed feedback laser

Hao Song, Lingjuan Zhao, Zi Wang, Hao Wang, Dan Lu, Ruikang Zhang
article en
9 citations

Abstract

A high-power, narrow-linewidth, low-relative-intensity-noise (RIN) distributed feedback (DFB) laser is demonstrated. The laser employs four strained AlGaInAs quantum wells and three diluted waveguides to reduce internal loss, and enhance heat dissipation performance to reach a high power and low noise operation. At a test temperature of 15 °C, the DFB laser with a cavity length of 1.5 mm exhibited single mode output power of 517 mW in pulsed mode and 424 mW in continuous-wave (CW) mode. with far-field full width at half maximum (FWHM) divergence angles of 10°×20°. In addition, the DFB laser achieved an intrinsic linewidth of 21 kHz, and an ultra-low RIN of less than -168 dB/Hz.

Optics ExpressVol. 33(3)
Institute of Semiconductors (CN), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 4%
Semiconductor Lasers and Optical Devices
6.57
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