Oxide growth and corrosion resistance of Si-containing SiC fuel matrices fabricated by reaction sintering for high-power nuclear reactors
• The Si-containing RS-SiC exhibits remarkable resistance to air oxidation up to 1400°C, demonstrating its potential for high-temperature applications in nuclear accident scenarios. • At 1400°C, a uniform 20 μm oxide layer with a pure 2 μm Si layer between SiO 2 and SiC is formed, highlighting the material's stable oxidation behavior at elevated temperatures. • The presence of residual Si shifts the passive/active transition behavior of RS-SiC in a preferable direction, significantly enhancing its corrosion resistance compared to Si-less RS-SiC. To assess the potential risk of fuel matrix degradation, this study examines the oxidation behavior of the reaction-sintered SiC containing residual Si (Si-RS-SiC) during air-ingress accidents. Si-RS-SiC samples were subjected to oxidation tests in air and under 1 ppm O 2 flow using thermogravimetric analysis (TGA). The morphology and thickness of the silicon oxide layer were investigated using scanning electron microscopy with energy-dispersive X-ray spectroscopy. The Si-RS-SiC exhibited exceptional resistance to air oxidation up to 1400°C, forming a uniform oxide layer of 20 μm thickness with a pure Si layer (2 μm thick) between SiO 2 and SiC at this temperature. At lower temperatures, the Si-RS-SiC formed oxide layers with irregular thickness, which became thicker and more uniform as the temperature increased. Additionally, TGA tests in 1 ppm O 2 showed that the passive/active transition behavior of Si-RS-SiC shifts in a preferable direction compared to previously reported Si-less RS-SiC, indicating that the presence of residual Si significantly enhances the corrosion resistance.
Authors
- Anna Gubarevich (ORCID: https://orcid.org/0000-0003-4959-0227)
- Koji Okamoto (ORCID: https://orcid.org/0000-0001-7587-0164)
- Katsumi Yoshida (ORCID: https://orcid.org/0000-0002-2735-2263)
- Yosuke Nishimura (ORCID: https://orcid.org/0009-0005-6656-3900)
Institutions
- Tokyo Institute of Technology (JP)
- The University of Tokyo (JP)
Publication Details
- Journal
- Open Ceramics
- Published
- 2025-01-16
- DOI
- https://doi.org/10.1016/j.oceram.2025.100740
- Citations
- 2
- Primary Topic
- Advanced ceramic materials synthesis
- Type
- article
- Field-Weighted Citation Impact
- 1.45