Low Power Optimization of Hybrid Logic Full Adder Design using FinFET 32nm Technology

This paper presents a low power optimisation strategy for designing a 32nm FinFET hybrid logic full adder (HLFA). The recommended architecture uses complementary metal-oxide-semiconductors (CMOS) and pass-transistor logic (PTL) to balance power consumption and performance. The optimisation reduces average power, power dissipation, latency, and PDP while maintaining acceptable area overhead. FinFET technology improves gate control and reduces leakage currents compared to CMOS technology for the HLFA. HSPICE simulation is used to evaluate the proposed design. Low power optimisation solutions including gate resizing, input capacitance reduction, and leakage current reduction are tested on average power, power dissipation, latency, and PDP. Due to the research, all of these indicators have improved, indicating that the suggested design is suitable for low-power digital system applications.

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Publication Details

Published
2024-09-18
DOI
https://doi.org/10.1109/ic3i61595.2024.10828606
Citations
2
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
0.42
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article

Low Power Optimization of Hybrid Logic Full Adder Design using FinFET 32nm Technology

Kanika Jindal, Sanjeev Kumar, Pavan K. Shukla
2 citations
Advancements in Semiconductor Devices and Circuit Design
0.42
article

Low Power Optimization of Hybrid Logic Full Adder Design using FinFET 32nm Technology

Kanika Jindal, Sanjeev Kumar, Pavan K. Shukla
article en
2 citations

Abstract

This paper presents a low power optimisation strategy for designing a 32nm FinFET hybrid logic full adder (HLFA). The recommended architecture uses complementary metal-oxide-semiconductors (CMOS) and pass-transistor logic (PTL) to balance power consumption and performance. The optimisation reduces average power, power dissipation, latency, and PDP while maintaining acceptable area overhead. FinFET technology improves gate control and reduces leakage currents compared to CMOS technology for the HLFA. HSPICE simulation is used to evaluate the proposed design. Low power optimisation solutions including gate resizing, input capacitance reduction, and leakage current reduction are tested on average power, power dissipation, latency, and PDP. Due to the research, all of these indicators have improved, indicating that the suggested design is suitable for low-power digital system applications.

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Advancements in Semiconductor Devices and Circuit Design
0.42
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