A 24-Gb/s PAM-4 Tailless Current-mode Driver with Output Impedance Enhancing Technique in 14-nm FinFET

This paper presents a four-level pulse amplitude modulation (PAM-4) transmit driver utilizing the tailless current-mode structure. The PAM-4 driver operates at 24 Gb/s with a 1.3-V supply voltage, leveraging the advantage of the tailless approach. The low output impedance inherent to the tailless current-mode drivers is enhanced using a gain-boosting technique. The prototype chip was fabricated using a 14-nm FinFET process, achieving a vertical eye-opening of 44.6 mV at 24 Gb/s while consuming 60.3 mW. It achieved an energy efficiency of 2.513 pJ/bit. Through the gain boosting technique, the output impedance increased by approximately 100%.

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Publication Details

Journal
JSTS Journal of Semiconductor Technology and Science
Published
2024-12-31
DOI
https://doi.org/10.5573/jsts.2024.24.6.540
Citations
1
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.21
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article

A 24-Gb/s PAM-4 Tailless Current-mode Driver with Output Impedance Enhancing Technique in 14-nm FinFET

Jaeduk Han, Yunseong Jo
1 citations
JSTS Journal of Semiconductor Technology and Science
Semiconductor materials and devices
0.21
article

A 24-Gb/s PAM-4 Tailless Current-mode Driver with Output Impedance Enhancing Technique in 14-nm FinFET

Jaeduk Han, Yunseong Jo
article en
1 citations

Abstract

This paper presents a four-level pulse amplitude modulation (PAM-4) transmit driver utilizing the tailless current-mode structure. The PAM-4 driver operates at 24 Gb/s with a 1.3-V supply voltage, leveraging the advantage of the tailless approach. The low output impedance inherent to the tailless current-mode drivers is enhanced using a gain-boosting technique. The prototype chip was fabricated using a 14-nm FinFET process, achieving a vertical eye-opening of 44.6 mV at 24 Gb/s while consuming 60.3 mW. It achieved an energy efficiency of 2.513 pJ/bit. Through the gain boosting technique, the output impedance increased by approximately 100%.

JSTS Journal of Semiconductor Technology and ScienceVol. 24(6)
Affordable and clean energy
Openalex Percentile: Top 44%
Semiconductor materials and devices
0.21
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