Vertically Stacked Three-Gate Reconfigurable Nanosheet and Reconfigurable Nanowire Transistors

In this work, the design of three-gate reconfigurable fin based nanosheet and nanowire devices are proposed. Reconfigurable Field-Effect transistors (RFETs) employ fewer devices in a circuit level. Fin based Field Effect Transistors (FinFETs) have superior control over short channel effects than metal-oxide semiconductor field-effect transistors (MOSFETs). This work seeks to realize three-gate reconfigurable FinFET (3G-RFinFET) by leveraging the advantages of these two devices. The 3G-RFinFET is studied for DC and AC characteristics. The results show ION/IOFF switching ratio of more than 106 and sub-threshold swing of 64.3 mV/dec. Further the 3G-RFinFET is used to realize two vertically stacked structures namely nanosheet and nanowire. Vertically stacked three-gate reconfigurable fin based nanosheet (3G-Rnanosheet) and vertically stacked three-gate reconfigurable fin based nanowire (3G-Rnanowire) devices are designed and their ID–VG characteristics is studied and compared. The three-gate vertically stacked reconfigurable fin based nanosheet produced excellent switching ratio when compared to the nanowire and it was further analysed for dimensional scaling. On comparing all devices designed in this work, the 3G-Rnanosheet produced significant improvement in results.