Ultra Compact X-Band High Power Amplifier with Inbuilt Monitoring and Reporting System
This paper describes the design and development of a high Power Gallium Nitride (GaN) based Solid State Pulsed Power Amplifier (SSPPA). The paper dwells on the nonlinear simulation of the power amplifier with special emphasis on planar high power splitting and combining techniques. The unique charge storage mechanisms adopted in the realization is explained. The self-protection features incorporated are illustrated in detail. This amplifier is designed in the X-Band to generate a peak power of 250W at a duty of 20%. It is purely convection cooled and is a remotely operated system. This amplifier can be used as a building block to generate higher power amplifiers.
Authors
- Dilip Kumar BJ
- S Narendra
- V. Kavitha
- G Vakula
Institutions
- Bharat Electronics (India) (IN)
Publication Details
- Published
- 2024-10-16
- DOI
- https://doi.org/10.1109/ictc62082.2024.10827585
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00