Vertical GaN FinFET with Small form Factor and High Reliability for Implementation of 6G Communication
The development of 6G communications requires fast switching and high-power electronics with high reliability. Vertical GaN FinFET is one of the next-generation power devices for 6G communication due to its small form factor with high breakdown voltage and reliability. In this work, we present the fabrication strategy for implementing a vertical GaN FinFET structure. Optimized vertical Fin etch, planarization and process integration give guidelines for developing vertical GaN FinFET.
Authors
- Hyung‐Seok Lee (ORCID: https://orcid.org/0009-0007-3090-9126)
- Sung‐Bum Bae (ORCID: https://orcid.org/0000-0002-5091-1529)
- Hyeon-Tak Kwak (ORCID: https://orcid.org/0000-0001-5110-7084)
- Hoe‐Min Kwak (ORCID: https://orcid.org/0009-0004-3134-8664)
- Jaewon Park (ORCID: https://orcid.org/0000-0002-5704-726X)
- Hyun–Woo Lee (ORCID: https://orcid.org/0000-0002-5173-726X)
- Donghan Kim (ORCID: https://orcid.org/0000-0002-0973-8074)
Institutions
- Electronics and Telecommunications Research Institute (KR)
Publication Details
- Published
- 2024-10-16
- DOI
- https://doi.org/10.1109/ictc62082.2024.10827337
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00