GaAs mHEMT Technology Achieving a High Cut-Off Frequncy of 446 GHz with a Gate Length of 75 nm
This work explores GaAs mHEMTs with an InGaAs channel. By using recess wet etching process, a cut-off frequency <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\boldsymbol{f}_{\boldsymbol{t}})$</tex> of 446 GHz was achieved with a gate length <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\boldsymbol{L}_{\boldsymbol{g}})$</tex> of 75 nm. This result is the highest record for GaAs mHEMTs in the gate length range of 70–80 nm and highlights the potential of mHEMTs as a cost-effective solution for 6G MMIC applications.
Authors
- Hong‐Gu Ji (ORCID: https://orcid.org/0000-0002-2052-5475)
- Kyujun Cho (ORCID: https://orcid.org/0000-0003-2520-9321)
- Byoung‐Gue Min (ORCID: https://orcid.org/0000-0002-5349-2526)
- Hak Jun Kim (ORCID: https://orcid.org/0000-0001-8257-809X)
- Gyejung Lee (ORCID: https://orcid.org/0000-0002-5924-5913)
- Dong Min Kang (ORCID: https://orcid.org/0000-0003-4758-3365)
- Woojin Chang (ORCID: https://orcid.org/0000-0003-0911-3709)
- Junhyung Jeong (ORCID: https://orcid.org/0000-0003-2383-1635)
- Jong Yul Park (ORCID: https://orcid.org/0000-0003-1310-6819)
- Jong‐Min Lee
Institutions
- Electronics and Telecommunications Research Institute (KR)
Publication Details
- Published
- 2024-10-16
- DOI
- https://doi.org/10.1109/ictc62082.2024.10826917
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Institute for Information and Communications Technology Promotion