High-Efficiency GaN Vertical PiN Diode Power Devices for Satellite Communications in 6G Networks

6G telecommunication technology has received considerable attention because of the increased data for communication and data processing for AI hardware. One of the key technology of 6G telecommunication is power efficiency to reduce power loss for fast switching and high power with high breakdown voltage. In this regard, GaN is promising material candidates for high power and high current applications due to its superior material properties like wide bandgap(~3.4 ev), high critical electric field(~3.5 MV /cm), high electron saturation velocities and low switching losses for using next-generation power devices in 6G telecommunication technology. In this study, enhanced contact method on p-type GaN is presented for vertical GaN-based power devices such as PiN diode and vertical trench MOSFET. Vertical GaN-on-GaN PiN diode with low contact resistance on p-GaN is fabricated and its device performance with contact characteristics will be discussed.