new photoresponse mode in GaN based detectors

Authors

Institutions

Publication Details

Journal
SPIRE - Sciences Po Institutional REpository
Published
2024-11-03
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

new photoresponse mode in GaN based detectors

Maxime Hugues, Jean‐Yves Duboz, Sébastien Chenot, Éric Frayssinet et al.
2 links
SPIRE - Sciences Po Institutional REpository
GaN-based semiconductor devices and materials
article

new photoresponse mode in GaN based detectors

Maxime Hugues, Jean‐Yves Duboz, Sébastien Chenot, Éric Frayssinet, P. Hofverberg, Matilde Siviero, Lucas Lesourd, And Joël Hérault
article en

Abstract

No abstract available for this paper.
SPIRE - Sciences Po Institutional REpository
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (FR), Fédération française de cardiologie (FR), Centre Antoine Lacassagne (FR)
Affordable and clean energy
Openalex Percentile: Top 84%
GaN-based semiconductor devices and materials
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.