GaN HEMT Gate Driver for Crosstalk Suppression

Gallium Nitride (GaN) transistors, when used in a phase-leg configuration, introduce crosstalk effects during turn-on and turn-off transients. To address this, an Active Gate Drive (AGD) circuit, consisting of a capacitor, diode, and PNP transistor, is proposed, with lower loop impedance and a faster discharging method. The proposed AGD gate driver does not require an additional voltage source or external control, simplifying its design and making it more compact. The effectiveness of the proposed AGD circuit was demonstrated through double-pulse testing (DPT) using the GS66516T, with testing, results, and analysis conducted using L Tspice simulation.