Photoconductive Semiconductor Switches: Materials, Physics, and Applications
Photoconductive semiconductor switching (PCSS) devices have unique characteristics to address the growing need for electrically isolated, optically gated, picosecond-scale jitter devices capable of operating at high voltage, current, and frequency. The state of the art in material selection, doping, triggering, and system integration in PCSSs is presented. The material properties and doping considerations of GaN, GaAs, SiC, diamond, and β-Ga2O3 in the fabrication of PCSS devices are discussed. A review of the current understanding of the physics of the high-gain mode known as lock-on is presented.
Authors
- Robert Kaplar (ORCID: https://orcid.org/0000-0002-7928-9104)
- Harold P. Hjalmarson (ORCID: https://orcid.org/0000-0001-5982-3739)
- Jack Flicker (ORCID: https://orcid.org/0000-0002-1223-2154)
- Vincent Meyers (ORCID: https://orcid.org/0000-0001-7673-1553)
- Jane Lehr (ORCID: https://orcid.org/0000-0001-9482-7620)
- Nicolás Martín González (ORCID: https://orcid.org/0000-0001-6566-2222)
- Soroush Ghandiparsi
- Gregory Pickrell (ORCID: https://orcid.org/0000-0003-0337-7236)
- Luciano Garcia Rodriguez (ORCID: https://orcid.org/0000-0002-4608-2940)
- Lars F. Voss (ORCID: https://orcid.org/0000-0002-6349-8219)
Institutions
- Lawrence Livermore National Laboratory (US)
- University of New Mexico (US)
- Sandia National Laboratories (US)
Publication Details
- Journal
- Applied Sciences
- Published
- 2025-01-10
- DOI
- https://doi.org/10.3390/app15020645
- Citations
- 9
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 3.85
Funders
- Advanced Research Projects Agency - Energy
- Advanced Research Projects Agency