A Schmidt comparator for single-event_transient protection

The influence of single-event_transient effects on Schmidt comparator under radiation conditions is investigated using a 0.25μm CMOS process. After simulation analysis, it is found that the output node and input reference current node of the Schmidt comparator are sensitive to the single-particle transient effect, and the magnitude of the output driving capability of the bias circuit of the sensitive node affects the ability of the Schmidt comparator to resist the single-event _transient effect. To increase the comparator's resistance to single-particle transients, the comparator's resistance to single-event_transients is increased by adding a compensating current source and increasing the number of parallel tubes.