Flexible Monolayer WS₂-Based Pseudo-CMOS Inverters for In-Sensor Computing

In-sensor computing remains a challenge for conventional sensor architectures, especially with traditional semiconductors which do not naturally interface with flexible sensors. Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) have received recent interest due to its atomic thinness and sensitivity to environmental stimuli. Here, we demonstrate the first pseudo-CMOS circuits based on monolayer <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$n$</tex>-type tungsten disulfide <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\left(\text{WS}_2\right)$</tex> and showcase their sensitivity to biaxial tensile strain. We observe strong power consumption dependence and direct current (dc) gain magnitude variation within 100% up to 0.5% biaxial tensile strain. This work suggests <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{W S}_2$</tex> and TMDs as promising materials for in-sensor computing. promising materials for in-sensor computing.