Effects of Ni/Cu Bilayer Structure on The Optical and Electrical Characteristics of Al-Doped ZnO Thin-Film

The present study aims at investigating the impact of bimetal Ni-Cu intermediate layer on the performances of thin-film AZO-based structure, as alternative reliable broadband optical sensor. In this regard, this paper provides an in-depth experimental analysis of the Optoelectrical properties of AZO-Ni-Cu-AZO structures deposited on glass substrates for broadband (UV-Vis-NIR) photosensing applications. Employing RF Sputtering for the deposition process, we investigate the integration of Nickel (Ni) to enhance the reliability properties, particularly thermal and electromagnetic radiation effects, within the Aluminum Zinc Oxide (AZO) matrix. Moreover, the prepared structure (AZO-Ni-AZO) is re-engineered by introducing an ultrathin Copper (Cu) layer, in order to enhance the electrical properties and flexibility behavior of the sensor. The investigated AZO-Ni-Cu-AZO structure exhibits improved photodetectivity, which makes it as an alternative for developing advanced optoelectronic devices for reliable, flexible and low-cost thin-film technology.