Optical and Electrical Characteristics of Flexible AZO-Cu-AZO Structure Prepared Via RF Sputtering Technique

This article provides an in-depth analysis of the optical and electrical characteristics of a multilayer film consisting of AZO-Cu-AZO, which was formed using RF magnetron sputtering. The film has a thickness of 40 nm for both AZO layers and 10 nm for the middle Cu ultra-thin film. The optical characterization shows that the material has a wide range of wavelengths that it can transmit, from 442 nm to 778 nm. This range covers most of the visible and near-infrared spectrum. The material has a peak transmittance of around 70%, which suggests that it could be used as a transparent coating for optoelectronic applications. Hall effect characterization reveals a significant abundance of charge carriers of the n-type, with a concentration of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">21</sup> cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> and a good recorded electron mobility. The results indicate that the AZO-Cu-AZO layer exhibits a high level of electrical conductivity while also preserving a good optical transparency. Moreover, the economic benefits and mechanical flexibility of this structure indicate its potential use in flexible portable electronic devices and other applications. The results emphasize the significance of improving deposition methods in order to get the highest possible material performance for optoelectronic applications.