The Novel Image Sensor with Inverter Structure

This study examines the performance of an NMOS inverter-based image sensor circuit. Simulation results show that as the input voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\left(\mathbf{V}_{\mathbf{i} \mathbf{n}}\right)$</tex> increases from 4V to 5V, the output voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\left(\mathbf{V}_{{\mathbf{o}\mathbf{u}\mathbf{t} }}\right)$</tex> drops sharply from 9.41V to 2.74V, highlighting the circuit's precise voltage transfer characteristics. Additionally, variations in the transistor threshold voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathbf{V}_{\mathbf{t}\mathbf{h}})$</tex> I, specifically adjusting Vth to 0.2V and 1.2V, have minimal impact on the output voltage, demonstrating the circuit's stability. The nonlinear response of the output voltage to changes in the input voltage indicates a high level of sensitivity. Overall, the proposed circuit exhibits both high precision and stability, suggesting that further performance improvements could be achieved through design optimization.