X-Band GaN Power Amplifier MMIC Design and Radiation Evaluations for Space Applications

This paper reports on the development of X-band GaN power amplifier (PA) monolithic microwave integrated circuit (MMIC) that is suitable for active electronically scanned array (AESA) radar and satellite synthetic aperture radar (SAR) applications. The PA MMIC designed using GH15-10 GaN technology exhibits gain of 27 dB, output power of 42.5 dBm, and PAE of 55 % in the 8.5~11 GHz frequency range with a compact size of 3.78 mm × 1.3 mm. Also, radiation evaluations with TID and SEE tests of the developed MMIC are discussed.

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Publication Details

Published
2024-11-03
DOI
https://doi.org/10.1109/icce-asia63397.2024.10773715
Citations
2
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.62

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X-Band GaN Power Amplifier MMIC Design and Radiation Evaluations for Space Applications

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GaN-based semiconductor devices and materials
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article

X-Band GaN Power Amplifier MMIC Design and Radiation Evaluations for Space Applications

Y.S. Noh, Seongju Chang, Jong‐Won Lim, Dong‐Seok Kim, Hyun-Do Jung
article en
2 citations

Abstract

This paper reports on the development of X-band GaN power amplifier (PA) monolithic microwave integrated circuit (MMIC) that is suitable for active electronically scanned array (AESA) radar and satellite synthetic aperture radar (SAR) applications. The PA MMIC designed using GH15-10 GaN technology exhibits gain of 27 dB, output power of 42.5 dBm, and PAE of 55 % in the 8.5~11 GHz frequency range with a compact size of 3.78 mm × 1.3 mm. Also, radiation evaluations with TID and SEE tests of the developed MMIC are discussed.

Electronics and Telecommunications Research Institute (KR), Korea Atomic Energy Research Institute (KR)
National Research Foundation of Korea
Affordable and clean energy
Openalex Percentile: Top 31%
GaN-based semiconductor devices and materials
0.62
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