Optical and Electrical Characterization of Single-Photon Avalanche Diodes Fabricated in CMOS Technology
This paper presents the design, fabrication, and characterization of single-photon avalanche diodes (SPADs) fabricated in 110 nm CMOS technology, optimized for photon-counting imaging and LiDAR applications. The SPADs are designed with active region sizes of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$5 \mu ~\mathrm{m}, 10 \mu ~\mathrm{m}, 15 \mu ~\mathrm{m}$</tex>, and 20 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mu \mathrm{m}$</tex>, and feature a retrograde virtual guard-ring (GR) structure to prevent premature edge breakdown. Electrical and optical characteristics, including current-voltage (I-V) curve, dark count rate (DCR), and photon detection probability (PDP), were measured to evaluate the performance of SPADs.
Authors
- Wooyoung Choi (ORCID: https://orcid.org/0000-0002-6797-0154)
- Myoung‐Jae Lee (ORCID: https://orcid.org/0000-0003-2626-0460)
- Eunsung Park (ORCID: https://orcid.org/0009-0008-0861-8813)
Institutions
- Yonsei University (KR)
Publication Details
- Published
- 2024-11-03
- DOI
- https://doi.org/10.1109/icce-asia63397.2024.10773713
- Citations
- 1
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- Ministry of Trade, Industry and Energy
- Korea Institute of Science and Technology
- Korea Evaluation Institute of Industrial Technology