Thermal Design of GaN Power Devices in Wafer Level Chip Scale Package (WLCSP) for Automotive EPS Motor Drivers
Since wafer-level chip-scale packages (WLCSPs) offer advantages of reducing parasitic inductance and package size, as well as enhancing thermal conductivity, this work comprises gallium nitride (GaN) devices in a WLCSP for automotive electric power steering (EPS) motor drivers. We present a thermal design of WLCSP GaN power transistor devices. The effectiveness and usefulness of our design are verified through thermal performance experiments and an in-vehicle EPS evaluation of steering assistance performance.
Authors
- Yeongo Kim
- Young-Jae Min (ORCID: https://orcid.org/0000-0002-0334-5560)
- Eunwoo Kim
- Eojin Kim (ORCID: https://orcid.org/0000-0003-4518-8468)
- Sewoong Ahn
- B. C. Kim
- Hakmin Kim
Institutions
- Halla University (KR)
Publication Details
- Published
- 2024-11-03
- DOI
- https://doi.org/10.1109/icce-asia63397.2024.10773701
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.31
Funders
- Korea Semiconductor Research Consortium