Thermal Design of GaN Power Devices in Wafer Level Chip Scale Package (WLCSP) for Automotive EPS Motor Drivers

Since wafer-level chip-scale packages (WLCSPs) offer advantages of reducing parasitic inductance and package size, as well as enhancing thermal conductivity, this work comprises gallium nitride (GaN) devices in a WLCSP for automotive electric power steering (EPS) motor drivers. We present a thermal design of WLCSP GaN power transistor devices. The effectiveness and usefulness of our design are verified through thermal performance experiments and an in-vehicle EPS evaluation of steering assistance performance.

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Publication Details

Published
2024-11-03
DOI
https://doi.org/10.1109/icce-asia63397.2024.10773701
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.31

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Thermal Design of GaN Power Devices in Wafer Level Chip Scale Package (WLCSP) for Automotive EPS Motor Drivers

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GaN-based semiconductor devices and materials
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article

Thermal Design of GaN Power Devices in Wafer Level Chip Scale Package (WLCSP) for Automotive EPS Motor Drivers

Yeongo Kim, Young-Jae Min, Eunwoo Kim, Eojin Kim, Sewoong Ahn, B. C. Kim, Hakmin Kim
article en
1 citations

Abstract

Since wafer-level chip-scale packages (WLCSPs) offer advantages of reducing parasitic inductance and package size, as well as enhancing thermal conductivity, this work comprises gallium nitride (GaN) devices in a WLCSP for automotive electric power steering (EPS) motor drivers. We present a thermal design of WLCSP GaN power transistor devices. The effectiveness and usefulness of our design are verified through thermal performance experiments and an in-vehicle EPS evaluation of steering assistance performance.

Halla University (KR)
Korea Semiconductor Research Consortium
Affordable and clean energy
Openalex Percentile: Top 40%
GaN-based semiconductor devices and materials
0.31
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