Noise Correlation in Silicon Spin Qubits: A Computational Study

The platform of silicon-based spin qubits holds significant potential for the hardware implementation of quantum computing. Charge noise, however, notably hinders the performance and scalability of silicon-spin-based quantum computing technologies. Here we computationally investigated correlated charge noise in silicon spin quantum computing devices by developing and applying a Green's transfer function approach. The approach allows for the systematic simulation and analysis of both the noise's auto-correlation and cross-correlation spectrums in a physics-based manner. We simulate the correlated noise's power spectral density (PSD) in silicon spin qubit devices. The results indicate strong cross-correlation and show phase-flipping features in neighboring silicon spin qubits, in agreement with a recent experiment. Given that each spin qubit device is small and influenced by a limited number of two-level fluctuators (TLFs), the arrangement of these TLFs plays a crucial role in the correlation of noise. The simulation study highlights the need to consider noise correlation and its related spectral features in developing robust quantum computing technologies based on silicon spin qubits.