Review Paper of Metal Insulator Metal and Metal Oxide Metal Capacitors for Improved Capacitance and Overall Performance
This review distinguishes the working principles, fabrication techniques, and various parameters such as capacitance values, voltages, fabrication cost, area, capacitance density, and leakage currents of metal-oxide-metal (MOM) and metal-insulator-metal (MIM) capacitors. These days, because of their benefits and affordability, these capacitors are utilized in chip design. MOM capacitors are manufactured and frequently interdigitated with metal contacts. MIM capacitors are constructed differently than other capacitors since they are mostly made of distinct metal layers separated by a dielectric layer. The cost of MIM capacitors is more than MOM capacitors but MOM capacitors are mostly limited to use. By comparing, we showed that the two capacitors’ performances were similar in the preliminary analysis, suggesting that MOM capacitors might eventually partially replace MIM capacitors in semiconductor production.
Authors
- Richa Yadav (ORCID: https://orcid.org/0000-0002-3196-3913)
- Vandana Niranjan (ORCID: https://orcid.org/0000-0001-8992-176X)
- Komal Duggal (ORCID: https://orcid.org/0000-0003-4490-8240)
- Akhil Bharti (ORCID: https://orcid.org/0000-0002-2568-2613)
- Bindu Bhardwaj
- Sylvia Keisham
Institutions
- Indira Gandhi Delhi Technical University for Women (IN)
Publication Details
- Published
- 2024-09-12
- DOI
- https://doi.org/10.1109/sparc61891.2024.10829176
- Primary Topic
- Supercapacitor Materials and Fabrication
- Type
- article
- Field-Weighted Citation Impact
- 0.00