Precision manufacturing of glass dielectric resonator antennas for sub‐THz applications using laser induced deep etching technology

Abstract This letter demonstrates for the first time how laser induced deep etching (LIDE) technology is used to manufacture highly precise glass dielectric resonator antenna (DRA) for sub‐THz applications. The glass resonator antennas shown in this letter operate in the 110–170 GHz (D‐band) frequency range, which is highest frequency at which glass dielectric resonator antennas have been demonstrated to date. The letter discusses the design, manufacturing precision and measurement details for both a single rectangular DRA element, as well as a 4‐by‐4 array. The measured bandwidth of the singular rectangular DRA stretches from 117–160 GHz, with a peak gain of 6.1 dBi. The array, in turn, has a measured bandwidth of 135–146 GHz, with a peak gain of 13.2 dBi. The excellent measurement results are proof of the suitability of the LIDE technology for highly precise sub‐THz antennas.