Fully Integrated Matching Network With Bondwire for Power Amplifier Minimization [Application Notes]
This article explores the advancement of wireless communication focusing on the development of high-performance front-end circuits in mature 5G and beyond mobile technologies. It investigates the design of power amplifiers (PAs) and the need for miniaturization because of the rising demand for high data rate applications. The article demonstrates the utilization of bondwires for the fully integrated matching network in PAs to achieve size reduction of the die and package. The use of gallium nitride-based transistors and high-electron-mobility transistors for fully integrated PAs is examined.
Authors
- Steve W. Y. Mung (ORCID: https://orcid.org/0000-0002-7412-2460)
- L. Ho (ORCID: https://orcid.org/0009-0006-4954-7199)
- Wing Shing Chan (ORCID: https://orcid.org/0000-0002-0881-5816)
- A. Ng (ORCID: https://orcid.org/0000-0001-9095-0939)
Institutions
- City University of Hong Kong (HK)
- Education University of Hong Kong (HK)
Publication Details
- Journal
- IEEE Microwave Magazine
- Published
- 2025-01-10
- DOI
- https://doi.org/10.1109/mmm.2024.3486600
- Primary Topic
- Advanced Power Amplifier Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00