Flexible InGaZnO Thin-Film Transistors With Gelatin Gate Dielectric for Nonvolatile Memory

Recently, the use of natural materials in device fabrication has become a significant trend in advancing ecofriendly and sustainable electronics, to achieve technologies with low carbon footprints and yet reliable functionality. This work demonstrates the utilization of gelatin, a natural protein, as a gate dielectric, in combination with InGaZnO semiconductor, to fabricate top-gated flexible Thin-Film Transistors (TFTs). More specifically, these devices exhibit non-volatile memory characteristics for 10V operation upon application of a voltage sweep of ±10V, with a maximum memory window of ≈12V and repetition for 100 continuous scans. Moreover, consistent static retention was obtained with a current on-off ratio of > 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> for 3 hours. The hygroscopic nature of gelatin enabled these devices to demonstrate reliable response as humidity sensor upon exposure to a humidity pulse (in the range between 42 % to 90 % Relative Humidity). In addition, TFTs demonstrated functionality during bending condition (down to 7mm bending radius) with 8 monthslong shelf-life.