Additional Pinning Effect by Heavy-Ion Irradiation in Coated Conductors with Artificial Pinning Centers
We investigated additional pinning effect on in-field <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">J</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> properties of coated conductors including Y<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> nano-particles as artificial pinning centers (APCs), where three types of heavy-ion beams were employed with the fluence of 4.84 × 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> to 7.26 × 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> ions/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. The addition of the irradiation defects enhanced the in-field <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">J</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub>. Furthermore, more upward shift in the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">J</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> was observed for the introduction of the defects with larger volume of the irradiation damage, not only in high magnetic fields but also in low magnetic fields. One factor of the irradiation effect is that the self-field <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">J</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> and the critical temperature <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> are relatively insensitive to the addition of the irradiation defects for the samples with APCs. Another is the glassy flux creep behavior over wide temperature region, suggesting that flux pinning by the combination of APCs and irradiation defects is strong against thermal fluctuation.
Authors
- Satoshi Semboshi (ORCID: https://orcid.org/0000-0002-0170-8137)
- Toshinori Ozaki (ORCID: https://orcid.org/0000-0003-3201-125X)
- Terukazu Nishizaki (ORCID: https://orcid.org/0000-0002-5403-0585)
- N. Ishikawa (ORCID: https://orcid.org/0000-0002-2217-3645)
- Tetsuro Sueyoshi (ORCID: https://orcid.org/0000-0003-0925-3971)
- Hitoshi Sakane
Institutions
- Japan Atomic Energy Agency (JP)
- Shimane University (JP)
- Kyushu Sangyo University (JP)
- Kwansei Gakuin University (JP)
- University of Shimane (JP)
Publication Details
- Journal
- IEEE Transactions on Applied Superconductivity
- Published
- 2025-01-10
- DOI
- https://doi.org/10.1109/tasc.2025.3527941
- Citations
- 1
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- Japan Society for the Promotion of Science