Spin Canting Promoted Manipulation of Exchange Bias in a Perpendicular Coupled Fe<sub>3</sub>GaTe<sub>2</sub>/CrSBr Magnetic van der Waals Heterostructure

Recently, two-dimensional (2D) van der Waals (vdW) magnetic materials have emerged as a promising platform for studying exchange bias (EB) phenomena due to their atomically flat surfaces and highly versatile stacking configurations. Although complex spin configurations between 2D vdW interfaces introduce challenges in understanding their underlying mechanisms, they can offer more possibilities in realizing effective manipulations. In this study, we present a spin-orthogonal arranged 2D Fe<sub>3</sub>GaTe<sub>2</sub> (FGaT)/CrSBr vdW heterostructure, realizing the EB effect with the bias field as large as 1730 Oe at 2 K. Interestingly, this structure induces a positive EB under low cooling field, in contrast to conventional phenomena. Moreover, by employing asymmetric field sweeping methods, we effectively manipulate the zero-field cooling EB of the device with a switchable sign and a tunable magnitude. Thus, these findings not only elucidate a distinct mechanism analysis for EB phenomena with perpendicular coupled spin configurations but also hold promise for promoting contemporary 2D spintronic device applications.

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Publication Details

Journal
ACS Nano
Published
2025-01-10
DOI
https://doi.org/10.1021/acsnano.4c14452
Citations
13
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
6.73

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article

Spin Canting Promoted Manipulation of Exchange Bias in a Perpendicular Coupled Fe3GaTe2/CrSBr Magnetic van der Waals Heterostructure

Ziyi Cao, Wenshuai Gao, Yong Fang, Yuxuan Jiang et al.
13 citations
ACS Nano
2D Materials and Applications
6.73
article

Spin Canting Promoted Manipulation of Exchange Bias in a Perpendicular Coupled Fe3GaTe2/CrSBr Magnetic van der Waals Heterostructure

Ziyi Cao, Wenshuai Gao, Yong Fang, Yuxuan Jiang, Mengmeng Yang, Xingyuan Hou, Zdeněk Sofer, Mingliang Tian, Aljoscha Söll, Lei Shan, Xue Liu, Yue Yang, Junming Guo, Jiayuan Zhou, Jinsong Xu, Kaipeng Ni, Yang Chen, Huanghuang Cheng
article en
13 citations

Abstract

Recently, two-dimensional (2D) van der Waals (vdW) magnetic materials have emerged as a promising platform for studying exchange bias (EB) phenomena due to their atomically flat surfaces and highly versatile stacking configurations. Although complex spin configurations between 2D vdW interfaces introduce challenges in understanding their underlying mechanisms, they can offer more possibilities in realizing effective manipulations. In this study, we present a spin-orthogonal arranged 2D Fe<sub>3</sub>GaTe<sub>2</sub> (FGaT)/CrSBr vdW heterostructure, realizing the EB effect with the bias field as large as 1730 Oe at 2 K. Interestingly, this structure induces a positive EB under low cooling field, in contrast to conventional phenomena. Moreover, by employing asymmetric field sweeping methods, we effectively manipulate the zero-field cooling EB of the device with a switchable sign and a tunable magnitude. Thus, these findings not only elucidate a distinct mechanism analysis for EB phenomena with perpendicular coupled spin configurations but also hold promise for promoting contemporary 2D spintronic device applications.

ACS NanoVol. 19(2)
University of Science and Technology of China (CN), Anhui University (CN), Suzhou University of Technology (CN), University of Chemistry and Technology, Prague (CZ)
National Natural Science Foundation of China, Anhui Provincial Department of Education, Natural Science Foundation of Anhui Province, National Key Research and Development Program of China
Openalex Percentile: Top 3%
2D Materials and Applications
6.73
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