Optical characteristics of tungsten trioxide luminescence in different matrices

The comparative research using time-resolved spectroscopy of the optical characteristics of an emission in two types phosphors: natural phosphors: ZnWO4, CdWO4, microcrystalline WO3, and artificial once: wide band gap dielectrics LiF, MgF2и BaF2 doped with tungsten trioxide were presented. Both single crystals and сeramic samples obtained in the process of high-speed radiation synthesis in air under a flux of 1.5 MeV elec- trons were studied. It has been established that the spectral-kinetic characteristics of the studied materials lu- minescence are the similarity in dielectrics, where WO3 is present as a dopant; in semiconductors (MeWO4), where tungsten trioxide is present as WO62‒ oxyanion and in crystal lattice of tungsten trioxide binary com- ponent. It is found that tungsten trioxide, being doped in dielectric, forms a subband of impurity states in the dielectric band gap, due to which, of spatial separation of electron-hole impurity pairs becomes possible upon optical excitation of the dielectric.

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Publication Details

Journal
Bulletin of the Karaganda University Physics Series
Published
2024-12-28
DOI
https://doi.org/10.31489/2024ph4/143-155
Primary Topic
Luminescence Properties of Advanced Materials
Type
article
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article

Optical characteristics of tungsten trioxide luminescence in different matrices

Dossymkhan Mussakhanov, Gulnur Alpyssova, Л. А. Лисицына
Bulletin of the Karaganda University Physics Series
Luminescence Properties of Advanced Materials
article

Optical characteristics of tungsten trioxide luminescence in different matrices

Dossymkhan Mussakhanov, Gulnur Alpyssova, Л. А. Лисицына
article en

Abstract

The comparative research using time-resolved spectroscopy of the optical characteristics of an emission in two types phosphors: natural phosphors: ZnWO4, CdWO4, microcrystalline WO3, and artificial once: wide band gap dielectrics LiF, MgF2и BaF2 doped with tungsten trioxide were presented. Both single crystals and сeramic samples obtained in the process of high-speed radiation synthesis in air under a flux of 1.5 MeV elec- trons were studied. It has been established that the spectral-kinetic characteristics of the studied materials lu- minescence are the similarity in dielectrics, where WO3 is present as a dopant; in semiconductors (MeWO4), where tungsten trioxide is present as WO62‒ oxyanion and in crystal lattice of tungsten trioxide binary com- ponent. It is found that tungsten trioxide, being doped in dielectric, forms a subband of impurity states in the dielectric band gap, due to which, of spatial separation of electron-hole impurity pairs becomes possible upon optical excitation of the dielectric.

Bulletin of the Karaganda University Physics SeriesVol. 11629(4)
Openalex Percentile: Top 84%
Luminescence Properties of Advanced Materials
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Optical characteristics of tungsten trioxide luminescence in different matrices — Dossymkhan Mussakhanov, Gulnur Alpyssova, et al. · Bulletin of the Karaganda University Physics Series (2024) | TGRS Research Map | TGRS