Chemical bath deposition of Cadmiumbarium sulphide (CdBaS) thin film and its thickness effect on bandgapenergy

This study was basicallycentred on the chemical bath deposition technique of CdBaS (Cadmium Barium sulphide), and to determine the effect of thin film thickness on the bandgap energy of chemically deposited CdBaS. The thin films of CdBaS were deposited on several samples of glass slides using a chemical bath deposition (CBD) technique. Several precursors were used suchas CadmiumSulphate (CdSO4 Ammonia (NH3), Thiourea (T.U) CH4N2S and Barium Sulphate (BaSO4).The deposition of CdBaS depends on the parameters such as volume of precursors, deposition temperature and dip time to uncover the properties of the thin film using spectrophotometer. Annealing of substrate involves heating of films at high temperatures. Annealing was done at 1000C, 2000C, 3000C, 4000C and 5000C. The concentrations of NH3 and BaSO4 were varied in different sample of beakers. The result shows that the bandgap energy increases as temperature and film thickness increases.

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Publication Details

Journal
Scientia Africana
Published
2024-12-30
DOI
https://doi.org/10.4314/sa.v23i4.9
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Chemical bath deposition of Cadmiumbarium sulphide (CdBaS) thin film and its thickness effect on bandgapenergy

O.P. Elenwo
Scientia Africana
Chalcogenide Semiconductor Thin Films
article

Chemical bath deposition of Cadmiumbarium sulphide (CdBaS) thin film and its thickness effect on bandgapenergy

O.P. Elenwo
article en

Abstract

This study was basicallycentred on the chemical bath deposition technique of CdBaS (Cadmium Barium sulphide), and to determine the effect of thin film thickness on the bandgap energy of chemically deposited CdBaS. The thin films of CdBaS were deposited on several samples of glass slides using a chemical bath deposition (CBD) technique. Several precursors were used suchas CadmiumSulphate (CdSO4 Ammonia (NH3), Thiourea (T.U) CH4N2S and Barium Sulphate (BaSO4).The deposition of CdBaS depends on the parameters such as volume of precursors, deposition temperature and dip time to uncover the properties of the thin film using spectrophotometer. Annealing of substrate involves heating of films at high temperatures. Annealing was done at 1000C, 2000C, 3000C, 4000C and 5000C. The concentrations of NH3 and BaSO4 were varied in different sample of beakers. The result shows that the bandgap energy increases as temperature and film thickness increases.

Scientia AfricanaVol. 23(4)
University of Port Harcourt (NG), Rivers State University (NG)
Clean water and sanitation
Openalex Percentile: Top 77%
Chalcogenide Semiconductor Thin Films
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