PO<sub>4</sub><sup>3−</sup> Tetrahedron Assisted Chelate Engineering for 10.67%‐Efficient Antimony Selenosulfide Solar Cells

Anisotropic carrier transport and deep-level defect of antimony selenosulfide (Sb<sub>2</sub>(S,Se)<sub>3</sub>) absorber are two vital auses restraining the photovoltaic performance of this emerging thin-film solar cell. Herein, chelate engineering is proposed to prepare high-quality Sb<sub>2</sub>(S,Se)<sub>3</sub> film based on hydrothermal deposition approach, which realizes desirable carrier transport and passivated defects by using tetrahedral PO<sub>4</sub> <sup>3-</sup> ion in dibasic sodium phosphate (Na<sub>2</sub>HPO<sub>4</sub>, DSP). The PO<sub>4</sub> <sup>3-</sup> Lewis structure, on one hand in the form of [(SbO)<sub>3</sub>(PO<sub>4</sub>)] chelate, can adsorb on the polar planes of cadmium sulfide (CdS) layer, promoting the heterogeneous nucleation, and on the other hand, the tetrahedral PO<sub>4</sub> <sup>3-</sup> inhibits horizontal growth of (Sb<sub>4</sub>S(e)<sub>6</sub>)<sub>n</sub> ribbons due to size effects, thus achieving desirable [hk1] orientation. Moreover, the introduction PO<sub>4</sub> <sup>3-</sup> effectively passivates the antisite defect Sb<sub>S1</sub>. These synergistic effects have effectively improved carrier transport and reduced non-radiative recombination of the Sb<sub>2</sub>(S,Se)<sub>3</sub> absorber. Consequently, the DSP-modified Sb<sub>2</sub>(S,Se)<sub>3</sub> device efficiency increases from 8.59% to 10.67%.

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Publication Details

Journal
Advanced Materials
Published
2025-01-10
DOI
https://doi.org/10.1002/adma.202416885
Citations
48
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
35.06

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article

PO43− Tetrahedron Assisted Chelate Engineering for 10.67%‐Efficient Antimony Selenosulfide Solar Cells

Boyang Fu, Guangxing Liang, Xianghua Zhang, Bingsuo Zou et al.
48 citations
Advanced Materials
Chalcogenide Semiconductor Thin Films
35.06
article

PO43− Tetrahedron Assisted Chelate Engineering for 10.67%‐Efficient Antimony Selenosulfide Solar Cells

Boyang Fu, Guangxing Liang, Xianghua Zhang, Bingsuo Zou, Bin Zhu, Zhiqiang Li, Daocheng Pan, Donglou Ren, Yi Wang, Jun Xiong, Shuo Chen
article en
48 citations

Abstract

Anisotropic carrier transport and deep-level defect of antimony selenosulfide (Sb<sub>2</sub>(S,Se)<sub>3</sub>) absorber are two vital auses restraining the photovoltaic performance of this emerging thin-film solar cell. Herein, chelate engineering is proposed to prepare high-quality Sb<sub>2</sub>(S,Se)<sub>3</sub> film based on hydrothermal deposition approach, which realizes desirable carrier transport and passivated defects by using tetrahedral PO<sub>4</sub> <sup>3-</sup> ion in dibasic sodium phosphate (Na<sub>2</sub>HPO<sub>4</sub>, DSP). The PO<sub>4</sub> <sup>3-</sup> Lewis structure, on one hand in the form of [(SbO)<sub>3</sub>(PO<sub>4</sub>)] chelate, can adsorb on the polar planes of cadmium sulfide (CdS) layer, promoting the heterogeneous nucleation, and on the other hand, the tetrahedral PO<sub>4</sub> <sup>3-</sup> inhibits horizontal growth of (Sb<sub>4</sub>S(e)<sub>6</sub>)<sub>n</sub> ribbons due to size effects, thus achieving desirable [hk1] orientation. Moreover, the introduction PO<sub>4</sub> <sup>3-</sup> effectively passivates the antisite defect Sb<sub>S1</sub>. These synergistic effects have effectively improved carrier transport and reduced non-radiative recombination of the Sb<sub>2</sub>(S,Se)<sub>3</sub> absorber. Consequently, the DSP-modified Sb<sub>2</sub>(S,Se)<sub>3</sub> device efficiency increases from 8.59% to 10.67%.

Advanced MaterialsVol. 37(8)
Centre National de la Recherche Scientifique (FR), Guangxi University (CN), Shenzhen University (CN), Institut des Sciences Chimiques de Rennes (FR), Hebei University (CN), Université de Rennes (FR)
McGill University, National Natural Science Foundation of China, Guangxi University, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 0%
Chalcogenide Semiconductor Thin Films
35.06
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