Low-power edge detection based on ferroelectric field-effect transistor
Edge detection is one of the most essential research hotspots in computer vision and has a wide variety of applications, such as image segmentation, target detection, and other high-level image processing technologies. However, efficient edge detection is difficult in a resource-constrained environment, especially edge-computing hardware. Here, we report a low-power edge detection hardware system based on HfO<sub>2</sub>-based ferroelectric field-effect transistor, which is one of the most potential non-volatile memories for energy-efficient computing. Different from the conventional edge detectors requiring sophisticated hardware for the complex operation such as convolution and gradient, the proposed edge detector is analogue-to-digital converter free and loaded into a multi-bit content addressable memory, which only needs one 4 × 4 ferroelectric field-effect transistor NAND array. The experimental results show that the proposed hardware system is able to achieve efficient image edge detection at low power consumption (~10 fJ/per operation), realizing no-accuracy-loss, low-power and analogue-to-digital-converter-free hardware system, providing a feasible solution for edge computing.
Authors
- Jianshi Tang (ORCID: https://orcid.org/0000-0001-8369-0067)
- Chengji Jin (ORCID: https://orcid.org/0000-0002-8517-459X)
- Huaqiang Wu (ORCID: https://orcid.org/0000-0001-8359-7997)
- Huan Liu (ORCID: https://orcid.org/0000-0001-7329-0000)
- Jiacheng Xu (ORCID: https://orcid.org/0009-0008-2855-7405)
- Genquan Han (ORCID: https://orcid.org/0000-0001-5140-4150)
- Yian Ding
- Jiani Gu (ORCID: https://orcid.org/0000-0002-5876-9897)
- Jiajia Chen (ORCID: https://orcid.org/0000-0002-7573-176X)
- Xiao Yu (ORCID: https://orcid.org/0000-0001-9441-1705)
- Yan Liu (ORCID: https://orcid.org/0000-0001-5583-0587)
- Hongrui Zhang (ORCID: https://orcid.org/0009-0006-0920-2452)
- Bowen Chen (ORCID: https://orcid.org/0000-0003-3877-3837)
- Gaobo Lin
- Haoji Qian
- Rongzong Shen
- Miaomiao Zhang (ORCID: https://orcid.org/0009-0002-3628-1409)
Institutions
- Xuzhou University of Technology (CN)
- Xidian University (CN)
- Zhejiang Lab (CN)
- Zhejiang University of Technology (CN)
- Tsinghua University (CN)
Publication Details
- Journal
- Nature Communications
- Published
- 2025-01-10
- DOI
- https://doi.org/10.1038/s41467-024-55224-8
- Citations
- 12
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 8.77
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China