Resonant Tunneling Nanostructures: Eliminating Current Saturation on Negative Differential Conductivity Region in Compact Dissipative Simulations

A solution to the problem of resonant tunneling current saturation is proposed. This problem does not allow, within the traditional compact models, a correct qualitative and quantitative analysis to be carried out of the volt-ampere characteristics of double-barrier heterostructures. The reason for this problem is the asymptotic behavior of the function describing the structure transparency, so a non-saturating compact model was proposed to solve the problem of current transfer analysis in the region of negative differential conductivity. Validation of the proposed model confirmed its adequacy without losing the ability to analyze current transfer processes. This makes the developed compact model effective for simulating the operation of a wide range of devices with a resonant tunneling diode as a nonlinear element, regardless of the position of the operating point.

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Publication Details

Journal
Nanomaterials
Published
2025-01-10
DOI
https://doi.org/10.3390/nano15020100
Citations
1
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
1.25

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article

Resonant Tunneling Nanostructures: Eliminating Current Saturation on Negative Differential Conductivity Region in Compact Dissipative Simulations

Н. А. Ветрова, Mstislav Makeev, Evgeny Kuimov, С. А. Мешков et al.
1 citations
Nanomaterials
Semiconductor Quantum Structures and Devices
1.25
article

Resonant Tunneling Nanostructures: Eliminating Current Saturation on Negative Differential Conductivity Region in Compact Dissipative Simulations

Н. А. Ветрова, Mstislav Makeev, Evgeny Kuimov, С. А. Мешков, Vladimir Sinyakin, Vasiliy Shashurin
article en
1 citations

Abstract

A solution to the problem of resonant tunneling current saturation is proposed. This problem does not allow, within the traditional compact models, a correct qualitative and quantitative analysis to be carried out of the volt-ampere characteristics of double-barrier heterostructures. The reason for this problem is the asymptotic behavior of the function describing the structure transparency, so a non-saturating compact model was proposed to solve the problem of current transfer analysis in the region of negative differential conductivity. Validation of the proposed model confirmed its adequacy without losing the ability to analyze current transfer processes. This makes the developed compact model effective for simulating the operation of a wide range of devices with a resonant tunneling diode as a nonlinear element, regardless of the position of the operating point.

NanomaterialsVol. 15(2)
Bauman Moscow State Technical University (RU)
Russian Science Foundation
Openalex Percentile: Top 25%
Semiconductor Quantum Structures and Devices
1.25
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