Resonant Tunneling Nanostructures: Eliminating Current Saturation on Negative Differential Conductivity Region in Compact Dissipative Simulations
A solution to the problem of resonant tunneling current saturation is proposed. This problem does not allow, within the traditional compact models, a correct qualitative and quantitative analysis to be carried out of the volt-ampere characteristics of double-barrier heterostructures. The reason for this problem is the asymptotic behavior of the function describing the structure transparency, so a non-saturating compact model was proposed to solve the problem of current transfer analysis in the region of negative differential conductivity. Validation of the proposed model confirmed its adequacy without losing the ability to analyze current transfer processes. This makes the developed compact model effective for simulating the operation of a wide range of devices with a resonant tunneling diode as a nonlinear element, regardless of the position of the operating point.
Authors
- Н. А. Ветрова (ORCID: https://orcid.org/0000-0002-6218-4111)
- Mstislav Makeev (ORCID: https://orcid.org/0000-0001-8945-3919)
- Evgeny Kuimov (ORCID: https://orcid.org/0000-0001-6485-6754)
- С. А. Мешков (ORCID: https://orcid.org/0000-0002-5931-6021)
- Vladimir Sinyakin (ORCID: https://orcid.org/0000-0002-7110-8225)
- Vasiliy Shashurin
Institutions
- Bauman Moscow State Technical University (RU)
Publication Details
- Journal
- Nanomaterials
- Published
- 2025-01-10
- DOI
- https://doi.org/10.3390/nano15020100
- Citations
- 1
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.25
Funders
- Russian Science Foundation