Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices (Adv. Electron. Mater. 1/2025)
Multidimensional Power Devices Ultra-wide bandgap semiconductors are promising for power applications in grid and renewable energy systems. In article number 2300662, Yuhao Zhang and co-authors demonstrate nickel oxide as a p-type material with tunable doping and high field. The 8000 V charge-balance device shows a record high average electric field.
Authors
- Marko J. Tadjer (ORCID: https://orcid.org/0000-0002-2388-2937)
- Zhonghao Du (ORCID: https://orcid.org/0000-0001-5199-850X)
- Alan G. Jacobs (ORCID: https://orcid.org/0000-0003-1250-5885)
- Joseph Spencer (ORCID: https://orcid.org/0000-0001-6227-7054)
- Yuan Qin (ORCID: https://orcid.org/0000-0002-4691-3097)
- Matthew Porter (ORCID: https://orcid.org/0009-0002-3091-8333)
- Yuhao Zhang (ORCID: https://orcid.org/0000-0001-6350-4861)
- Boyan Wang (ORCID: https://orcid.org/0000-0001-9986-835X)
- Ming Xiao (ORCID: https://orcid.org/0000-0001-9072-6371)
- Yifan Wang (ORCID: https://orcid.org/0009-0004-3452-6649)
- Yunwei Ma
- Han Wang (ORCID: https://orcid.org/0000-0003-4709-2363)
Institutions
- University of Southern California (US)
- United States Naval Research Laboratory (US)
- Virginia Tech (US)
- University of Hong Kong (HK)
Publication Details
- Journal
- Advanced Electronic Materials
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1002/aelm.202570001
- Citations
- 1
- Primary Topic
- Transition Metal Oxide Nanomaterials
- Type
- article
- Field-Weighted Citation Impact
- 0.61