Rhodium‐Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra‐Wide Bandgap Semiconductors (Adv. Electron. Mater. 1/2025)

Ternary Ultra-Wide Bandgap Semiconductors In article number 2400547, Dao Hua Zhang and co-workers show that low energy level and flat band dispersion at valence band maximum (VBM) restricts the p-type conduction of β-Ga2O3. Here, β3B2;-Ga2O3-based new type ternary ultra-wide bandgap semiconductors: β-(RhxGa1−x)2O3's alloys with x from 0 to 0.5 are reported. The energy and band-dispersion curvature of β-Ga2O3's VBM are significantly enhanced via Rh-alloying. The bandgaps of β-(RhxGa1−x)2O3 are still much larger than that in commercial silicon carbide. The β-(RhxGa1−x)2O3 can be candidate semiconductors for a new generation of optoelectronics and power electronics.