Detuning dependence in current-light-output characteristics of GaN-based DFB laser diodes
Abstract We have developed GaN-based laterally coupled distributed-feedback laser diodes (LC DFB-LDs). We focused on the detuning between the DFB-oscillation wavelength and the gain-peak wavelength and systematically investigated the differences in the temperature dependence of the current-light-output ( I -L ) characteristics. As the detuning increased, the rate of temperature change in the threshold current decreased. Furthermore, the I -L characteristics of the DFB-LD with a detuning of +5.3 nm were nearly overlapped within the measured temperature range. Interestingly, the estimated characteristic temperature was negative (−499.4 K). The temperature coefficient of the gain-peak-wavelength shift increased linearly as the detuning increased. On the other hand, the temperature coefficient of the DFB-oscillation-wavelength shift showed a very small dependence on detuning and was 17 pm K −1 . These results provide useful insights for designing light sources with very small temperature dependence or light sources that exhibit the best performance at specific temperatures.
Authors
- Haruki Fukai
- Akihiko Sugitani
- Tomoyuki Tanikawa (ORCID: https://orcid.org/0000-0003-0148-9701)
- Junichi Nishinaka
- Ryuji Katayama (ORCID: https://orcid.org/0000-0002-7897-3393)
- Masahiro Uemukai
- Koichi Naniwae (ORCID: https://orcid.org/0009-0006-5363-4623)
- Toshihiko Fukamachi
- S Usuda
Institutions
- Ushio (Germany) (DE)
- Ushio (Japan) (JP)
- BoZo Research Center (Japan) (JP)
- The University of Osaka (JP)
Publication Details
- Journal
- Japanese Journal of Applied Physics
- Published
- 2025-01-10
- DOI
- https://doi.org/10.35848/1347-4065/ada903
- Citations
- 2
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 2.52