Detuning dependence in current-light-output characteristics of GaN-based DFB laser diodes

Abstract We have developed GaN-based laterally coupled distributed-feedback laser diodes (LC DFB-LDs). We focused on the detuning between the DFB-oscillation wavelength and the gain-peak wavelength and systematically investigated the differences in the temperature dependence of the current-light-output ( I -L ) characteristics. As the detuning increased, the rate of temperature change in the threshold current decreased. Furthermore, the I -L characteristics of the DFB-LD with a detuning of +5.3 nm were nearly overlapped within the measured temperature range. Interestingly, the estimated characteristic temperature was negative (−499.4 K). The temperature coefficient of the gain-peak-wavelength shift increased linearly as the detuning increased. On the other hand, the temperature coefficient of the DFB-oscillation-wavelength shift showed a very small dependence on detuning and was 17 pm K −1 . These results provide useful insights for designing light sources with very small temperature dependence or light sources that exhibit the best performance at specific temperatures.

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Publication Details

Journal
Japanese Journal of Applied Physics
Published
2025-01-10
DOI
https://doi.org/10.35848/1347-4065/ada903
Citations
2
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
2.52
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article

Detuning dependence in current-light-output characteristics of GaN-based DFB laser diodes

Haruki Fukai, Akihiko Sugitani, Tomoyuki Tanikawa, Junichi Nishinaka et al.
2 citations
Japanese Journal of Applied Physics
GaN-based semiconductor devices and materials
2.52
article

Detuning dependence in current-light-output characteristics of GaN-based DFB laser diodes

Haruki Fukai, Akihiko Sugitani, Tomoyuki Tanikawa, Junichi Nishinaka, Ryuji Katayama, Masahiro Uemukai, Koichi Naniwae, Toshihiko Fukamachi, S Usuda
article en
2 citations

Abstract

Abstract We have developed GaN-based laterally coupled distributed-feedback laser diodes (LC DFB-LDs). We focused on the detuning between the DFB-oscillation wavelength and the gain-peak wavelength and systematically investigated the differences in the temperature dependence of the current-light-output ( I -L ) characteristics. As the detuning increased, the rate of temperature change in the threshold current decreased. Furthermore, the I -L characteristics of the DFB-LD with a detuning of +5.3 nm were nearly overlapped within the measured temperature range. Interestingly, the estimated characteristic temperature was negative (−499.4 K). The temperature coefficient of the gain-peak-wavelength shift increased linearly as the detuning increased. On the other hand, the temperature coefficient of the DFB-oscillation-wavelength shift showed a very small dependence on detuning and was 17 pm K −1 . These results provide useful insights for designing light sources with very small temperature dependence or light sources that exhibit the best performance at specific temperatures.

Japanese Journal of Applied PhysicsVol. 64(2)
Ushio (Germany) (DE), Ushio (Japan) (JP), BoZo Research Center (Japan) (JP), The University of Osaka (JP)
Affordable and clean energy
Openalex Percentile: Top 14%
GaN-based semiconductor devices and materials
2.52
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Detuning dependence in current-light-output characteristics of GaN-based DFB laser diodes — Haruki Fukai, Akihiko Sugitani, et al. · Japanese Journal of Applied Physics (2025) | TGRS Research Map | TGRS